AI要約装置ジャーナル ChatGPT About

© 2026 FUSIONPAPERS

About 法務情報

トップに戻る

Diffusion of Sb in Strained and Relaxed Si and SiGe

Per Kringhøj, Arne Nylandsted Larsen, Sergey Yu. Shirayev1996年PHYSICAL REVIEW LETTERSIF 8.6 出版社

この論文にはまだAI要約がありません。

関連論文

Diffusion in strained Si(Ge)

1994PHYSICAL REVIEW LETTERS

Sn-Background-Induced Diffusion Enhancement of Sb in Si

1998PHYSICAL REVIEW LETTERS

Adsorption and Diffusion of Si Atoms on the H-Terminated Si(001) Surface: Si Migration Assisted by H Mobility

1997PHYSICAL REVIEW LETTERS

Binding and diffusion of a Si adatom on the Si(100) surface

1991PHYSICAL REVIEW LETTERS

Ge Diffusion at the Si(100) Surface

2010PHYSICAL REVIEW LETTERS

Vacancy diffusion on Si(100)-(2×1)

1993PHYSICAL REVIEW LETTERS

Diffusional Kinetics of SiGe Dimers on Si(100) Using Atom-Tracking Scanning Tunneling Microscopy

2000PHYSICAL REVIEW LETTERS

Adsorption and Diffusion of Si Adatom on Hydrogenated Si(100) Surfaces

1997PHYSICAL REVIEW LETTERS

Diffusion Mechanism of Si Adatoms on a Double-Layer Stepped Si(001) Surface

1997PHYSICAL REVIEW LETTERS

Diffusion of Sb in Strained and Relaxed Si and SiGe — 核融合論文 — FusionPapers