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Recent results of the T-10 tokamak

V.A. Vershkov, V.F. Andreev, A.A. Borschegovskiy, V.V. Chistyakov, M.M. Dremin, L.G. Eliseev, E.P. Gorbunov, S.A. Grashin, A.V. Khmara, A.Ya. Kislov2011年被引用 27Nuclear FusionIF 3出版社

Poloidal asymmetry and radial correlation lengths of turbulence were investigated in T-10 at low field side and high field side by correlation reflectometry. Correlation of plasma confinement with the turbulence type was observed. Improvements in heavy ion beam probe diagnostic enabled us to measure the plasma potential during electron cyclotron resonance heating (ECRH) in a wide range of radial positions and operational regimes. The turbulence appeared to rotate close to E × B velocity. The concept of electron internal transport barrier (e-ITB) formation at low-order rational surfaces under conditions of low density of the rational surfaces was proved by the observation of e-ITB formation near the q = 1.5 surface in discharges with non-central ECRH and current ramp-up. The kinetic phenomena were investigated by means of electron cyclotron emission (ECE) under the strong on-axis ECRH. Lithium gettering of the limiter and the wall allowed us to significantly reduce the impurity level and obtain a recycling coefficient as low as 0.3. The rates of carbon film deposition were measured in the working and cleaning discharges. Second harmonic EC assisted start-up was investigated. ECRH allowed us to control the generation of runaway electrons and the current decay rate after the energy quench at the density limit disruption.

日本語訳

T-10において、低磁場側および高磁場側での相関反射計測により、乱流のポロイダル非対称性と径方向相関長を調査した。プラズマ閉じ込めと乱流タイプとの相関が観測された。重イオンビームプローブ診断の改良により、電子サイクロトロン共鳴加熱(ECRH)中におけるプラズマ電位を、広範囲の径方向位置および運転領域で測定することが可能となった。乱流はE×B速度に近い速度で回転しているように見えた。低次の有理面密度が低い条件下での低次有理面における電子内部輸送障壁(e-ITB)形成の概念は、非中心ECRHおよび電流立ち上げを伴う放電においてq = 1.5面近傍でのe-ITB形成の観測によって実証された。運動論的現象は、強力なオンアクシスECRH下での電子サイクロトロン放射(ECE)によって調査された。リミターおよび壁のリチウムゲッタリングにより、不純物レベルを大幅に低減し、リサイクリング係数を0.3という低い値まで得ることができた。炭素膜堆積速度は、運転放電および洗浄放電において測定された。第2高調波EC支援立ち上げが調査された。ECRHにより、密度限界ディスラプション時のエネルギー急減後の逃走電子の生成および電流減衰率を制御することが可能となった。

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