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Investigation of transport processes close to limiter surfaces in TEXTOR-94

F Weschenfelder, J Winter, U Kögler, H G Esser, V Philipps, A Pospieszczyk, B Schweer, J von Seggern, M Z Tokar, P Wienhold1996年Plasma Physics and Controlled FusionIF 2.2出版社

Silane gas has been injected through a hole in the surface of test limiters during ohmically heated tokamak discharges in TEXTOR-94. The gas injection led to the deposition of a thin layer around the injection hole which was close to the area of the highest heat load. The layer was eroded in discharges without silane injection and spectroscopic measurements prove that the erosion of limiter material is reduced in areas where the layer is deposited. Surface analyses reveal that the layer was formed not only by the injected silicon but also by a large amount of carbon which must originate from other plasma-facing components. The preferential direction (symmetry line) of the deposition pattern is tilted by relative to the magnetic field lines. Calculations with the Monte Carlo code ERO-TEXTOR were used to interpret the data. The shape of the Si-deposition pattern can be recovered quantitatively by including an drift in a radial electric field originating from the gradient in the electron temperature profile above the limiter surface. The deposition pattern allows the `imaging' of the complex plasma flow close to the surface. To obtain agreement between calculated and experimentally observed deposition efficiencies a sticking coefficient much smaller than 1 and the influence of an electric field parallel to B have to be considered.

日本語訳

シランガスは、TEXTOR-ORにおけるオーミック加熱トカマク放電中に、試験リミッター表面の穴を通して注入された。ガス注入により、注入孔周辺に薄膜が堆積し、その領域は最高熱負荷領域に近いものであった。この層は、シラン注入のない放電においては侵食されたが、分光測定により、層が堆積した領域ではリミッター材料の侵食が低減することが実証された。表面分析により、この層は注入されたシリコンのみならず、他のプラズマ対向部品に由来する多量の炭素によっても形成されたことが明らかになった。堆積パターンの優先方向(対称線)は、磁力線に対して相対的に傾いていた。データの解釈には、モンテカルロコードERO-TEXTORによる計算が用いられた。Si堆積パターンの形状は、リミッター表面上部の電子温度勾配に由来する径方向電場における のドリフトを考慮することにより、定量的に再現することができた。堆積パターンは、表面近傍の複雑なプラズマ流の「可視化」を可能にする。計算と実験で観測された堆積効率の一致を得るためには、1よりもはるかに小さい付着係数と、Bに平行な電場の影響を考慮する必要がある。

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