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New and possible future trends in inductively coupled plasmas (ICPs) for semiconductor processing

John H Keller1997年Plasma Physics and Controlled FusionIF 2.2出版社

ICPs have become one of the dominant high-density plasma sources for etching. More variations of ICP etch sources are currently being developed and inductive systems for high-density plasma deposition are also being developed. In addition, helicon inductive sources are being developed in single loop and spiral antenna configurations. In the future these two fields may merge to combine the optimum features of both systems. The physics of low-pressure ICP systems will be discussed. Experimental effects of multipole magnetic fields near the rf coil will be described as they relate to low pressure and electronegative gases.

日本語訳

ICPは、エッチング用の主要な高密度プラズマ源の一つとなっている。現在、ICPエッチング源のさらなる変種が開発されており、また高密度プラズマ堆積用の誘導結合システムも開発されている。さらに、ヘリコン誘導源は、シングルループおよびスパイラルアンテナ構成で開発されている。将来的には、これらの2つの分野が融合し、両システムの最適な特徴を組み合わせる可能性がある。低圧ICPシステムの物理について議論する。また、低圧および電気陰性ガスに関連する、RFコイル近傍の多極磁場の実験的効果について述べる。

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Inductively coupled plasma
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