Type-II superlattice (T2SL) devices have the potential to be the new generation of semiconductor-based devices, however fabrication of these devices leads to surface defects that can create surface leakage channels. Passivation methods that are typically used in traditional semiconductors have proved unsuccessful. In this paper we present the initial findings of a low-temperature atmospheric pressure plasma polymerisation process capable of removing the unwanted oxide layers and depositing a thin layer of polymer to protect the surface. We examine the effect of monomer flow rate on the plasma optical emission and electrical characteristics and investigate the deposition chemistry. Finally, we demonstrate the effectiveness of the plasma treatment on T2SL devices and underpin the potential for this technique. These results were presented at the 50th IOP Plasma Physics Conference, April 2024.
This paper investigates a low-temperature atmospheric pressure plasma polymerization process to remove unwanted oxide layers and deposit a protective polymer layer on type-II superlattice (T2SL) devices. The process can help reduce surface leakage currents, a common issue in T2SL devices, by passivating the surface.