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Physical characterisation of dry etching plasmas used in semiconductor fabrication

V G I Deshmukh, T I Cox1988年Plasma Physics and Controlled FusionIF 2.2出版社

Dry etching using gaseous plasmas is an essential technique in the delineation of ultrafine features required for integrated circuits in today's silicon based technologies. The authors give examples of the use of dry etching and describes a selection of diagnostic tools that are proving useful in elucidating the underlying physics and chemistry of plasma based etching methods.

日本語訳

ガス状プラズマを用いたドライエッチングは、今日のシリコンベース技術における集積回路に必要とされる超微細パターンの形成において不可欠な技術である。著者らはドライエッチングの使用例を示し、プラズマベースのエッチング法の基礎となる物理と化学を解明する上で有用であることが実証されている診断ツールの選定について述べている。

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