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Estimation of edge electron temperature profiles via forward modelling of the electron cyclotron radiation transport at ASDEX Upgrade

S K Rathgeber, L Barrera, T Eich, R Fischer, B Nold, W Suttrop, M Willensdorfer, E Wolfrum, the ASDEX Upgrade Team2013年Plasma Physics and Controlled FusionIF 2.2出版社

We present a method to obtain reliable edge profiles of the electron temperature by forward modelling of the electron cyclotron radiation transport. While for the core of ASDEX Upgrade plasmas, straightforward analysis of electron cyclotron intensity measurements based on the optically thick plasma approximation is usually justified, reasonable analysis of the steep and optically thin plasma edge needs to consider broadened emission and absorption profiles and radiation transport processes. This is carried out in the framework of integrated data analysis which applies Bayesian probability theory for joint analysis of the electron density and temperature with data of different interdependent and complementary diagnostics. By this means, electron cyclotron radiation intensity delivers highly spatially resolved electron temperature data for the plasma edge. In H-mode, the edge gradient of the electron temperature can be several times higher than the one of the radiation temperature. Furthermore, we are able to reproduce the 'shine-through' peak—the observation of increased radiation temperatures at frequencies resonant in the optically thin scrape-off layer. This phenomenon is caused by strongly down-shifted radiation of Maxwellian tail electrons located in the H-mode edge region and, therefore, contains valuable information about the electron temperature edge gradient.

日本語訳

本論文では、電子サイクロトロン放射輸送の順方向モデリングによる、電子温度の信頼性の高いプロファイル取得手法を提示する。ASDEX Upgradeプラズマのコア領域では、光学厚プラズマ近似に基づく電子サイクロトロン強度測定の簡便な解析が通常正当化されるが、急峻で光学の薄いプラズマ端部では、放射と吸収のプロファイルの広がりや放射輸送過程を考慮した解析が必要となる。この解析は、異なる相補的・相互依存的診断からの電子密度・電子温度データをベイズ確率論に基づき統合的に解析する統合データ解析の枠組みで実施される。この手法により、電子サイクロトロン放射強度から、プラズマ端部における高い空間分解能の電子温度データが得られる。Hモードでは、電子温度の端部勾配は放射温度の勾配よりも数倍急峻になり得る。さらに、スクレイプオフ層内の共鳴周波数における放射温度の上昇として観測される「シャインスルー」ピークを再現できる。この現象は、Hモード端部領域に位置するマクスウェル分布の高エネルギー尾部電子による強く下方シフトした放射に起因し、したがって電子温度の端部勾配に関する貴重な情報を含んでいる。

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ASDEXASDEX UpgradeIon transport
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