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Electrostatic shielding of vaporizing surfaces exposed to hot plasmas

L.L. Lengyel, V.A. Rozhanskij, L.Yu. Veselova1996年被引用 20Nuclear FusionIF 3出版社

Bombardment of solid surfaces by energetic plasma particles may heat them to temperatures at which melting and intense vaporization begin. The incident charge carriers, depending upon their masses and initial energies, penetrate to different depths in the vapour layer, thus setting up there, together with the resident thermal charge carriers, electric fields. Three effects are considered: the electrostatic sheath at the solid surface, the electric field distribution in the vapour layer and the electrostatic sheath forming at the vapour-plasma interface. A self-consistent model is proposed for the transition of an initially negatively biased (with respect to the plasma potential) sheath to a double layer at the vapour-plasma interface; the respective threshold conditions are defined quantitatively. The field strength in the vapour layer and the potential drop at the vapour-plasma interface are functions of the ionization state of the vapour phase and of the electron fluxes available on the two sides of the sheath. The resulting field strengths and potential drops may significantly affect the particle energies and particle fluxes, thus reducing the total energy flux incident at the surface

日本語訳

固体表面への高エネルギー粒子の衝撃により、その表面は溶融と激しい蒸発が始まる温度まで加熱される可能性がある。入射する電荷キャリアは、その質量と初期エネルギーに応じて蒸気層内の異なる深さまで浸透し、そこに存在する熱電荷キャリアとともに電界を形成する。ここでは3つの効果が考慮される:固体表面における静電シース、蒸気層内の電界分布、および蒸気-プラズマ界面に形成される静電シースである。プラズマ電位に対して負にバイアスされたシースが、蒸気-プラズマ界面における二重層へと遷移する過程に対する自己無撞着モデルが提案される;それぞれの閾値条件は定量的に定義される。蒸気層内の電界強度と蒸気-プラズマ界面における電位降下は、蒸気相の電離状態と、シースの両側で利用可能な電子フラックスに依存する関数である。結果として生じる電界強度と電位降下は、粒子エネルギーと粒子フラックスに大きな影響を与え得るため、表面に入射する総エネルギーフラックスを減少させる。

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